Simulating the Avalanche Behavior of Trench Power MOSFETs
نویسندگان
چکیده
The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, the experimentally found dependence on design parameters was also possible to predict qualitatively by means of simulation.
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تاریخ انتشار 2006